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| 2SC4907 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4907 600 500 10 6(Pulse12) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 1max 100max 500min 10to30 0.5max 1.3max 8typ 45typ (Ta=25C) 2SC4907 Unit mA V V V MHz pF 16.90.3 8.40.2 A 13.0min 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.2 IB2 (A) -0.4 ton (s) 1max tstg (s) 4.5max tf (s) 0.5max 2.54 3.9 BCE IC - VCE Characteristics (Typical) 6 1A VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) 2 (I C/ I B= 5) IC - V BE Temperature Characteristics (Typical) 6 (VCE=4V) 80 0m A 5 Collector Current I C (A) 600m A 5 Collector Current I C (A) 4 400m A 4 300m A 3 200mA VBE(sat) 1 p) -55C (Case Tem Temp) 25C (Case Temp) (Case 125C ase 3 mp 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. emp se T 2 se (Ca (Ca 25C p) VCE(sat) 0 0.02 0.05 0.1 (C 125C -5 5 C 0 0 1 2 3 4 0.5 1 5 0 0 0.2 0.4 125 1 Te m 1 0.6 0.8 -55C C (Cas IB=100mA 25C 2 e Te Te mp) ) ) 1.0 1.2 1.4 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 DC C urrent G ain h FE j - a( C/W) h FE - IC Characteristics (Typical) ton*t s t g*t f ( s) 7 5 t on* t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 4 125C 25C VCC 200V IC:I B1: I B 2= 10:1:-2 1 0.5 tstg Sw it ching Time -55C Transient Thermal Resistance 1 10 ton 0.5 0.3 tf 0.1 0.2 0.5 1 5 6 5 0.02 0.05 0.1 0.5 1 56 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 5 Collect or Cur re nt I C( A) 10 0 Reverse Bias Safe Operating Area 20 10 5 30 P c - T a Derating s M aximum Power Dissipa ti on P C( W) W ith Collect or Cur ren t I C( A) 20 In fin ite he at si 1 1 Without Heatsink Natural Cooling L=3mH IB2=-0.5A Duty:less than 1% nk 0.5 Without Heatsink Natural Cooling 0.5 10 Without Heatsink 2 0.1 10 50 100 500 1000 0.1 10 50 100 500 1000 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 120 |
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